The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscope
- 1 March 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (3) , 275-279
- https://doi.org/10.1016/0038-1101(66)90112-2
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Observations of Individual Dislocations and Oxygen Precipitates in Silicon with a Scanning Electron Beam MethodJournal of Applied Physics, 1965
- Influence of mechanical damage on avalanche breakdown in silicon pn junctionsSolid-State Electronics, 1964
- Evaluation of Passivated Integrated Circuits Using the Scanning Electron MicroscopeJournal of the Electrochemical Society, 1964