Resistivity Increase in Ultrafine-Line Copper Conductor for ULSIs
- 1 October 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (10B) , L1097-1099
- https://doi.org/10.1143/jjap.40.l1097
Abstract
The resistivities of copper (Cu) thin films and damascene Cu fine lines were precisely measured by utilizing Matthiessen's rule. It was shown that this measurement method can produce reliable values without requiring precise and detailed line-dimension measurements. It was found that the increase in resistivities of the fine lines is much more than that of the films, and this increase results in an electron mean free path of 45 nm. We propose a simple equation for expressing line resistivity in terms of both line width and line thickness.Keywords
This publication has 5 references indexed in Scilit:
- Recrystallization effects in Cu electrodeposits used in fine line damascene structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu filmsThin Solid Films, 2001
- Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External SurfacesPhysical Review B, 1970
- Electrical Conductivity of Thin Metallic Films with Unlike SurfacesJournal of Applied Physics, 1965
- The Influence of a Transverse Magnetic Field on the Conductivity of Thin Metallic FilmsPhysical Review B, 1950