Avalanche breakdown voltage of multiple epitaxial pn junctions
- 30 April 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (4) , 459-466
- https://doi.org/10.1016/0038-1101(73)90183-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxial ?-? n-p-n high-voltage power transistorsIEEE Transactions on Electron Devices, 1970
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Application of Multilayer Potential Distribution to Spreading Resistance Correction FactorsJournal of the Electrochemical Society, 1969
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964