Carrier-induced lasing wavelength shift for quantum well laser diodes
- 1 July 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (7) , 1155-1159
- https://doi.org/10.1109/jqe.1987.1073481
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Short cavity GaAs/AlGaAs multiquantum well lasers by dry etchingApplied Physics Letters, 1986
- Electronic structure of free carriers in quantum wells calculated by density-functional theoryPhysical Review B, 1986
- Evidence of no k-selection in gain spectra of quantum well AlGaAs laser diodesIEEE Journal of Quantum Electronics, 1985
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW HeterostructuresJapanese Journal of Applied Physics, 1984
- Very low threshold current GaAs–AlGaAs GRIN-SCH lasers grown by MBE for OEIC applicationsJournal of Vacuum Science & Technology B, 1984
- Exchange and correlation in atoms, molecules, and solids by the spin-density-functional formalismPhysical Review B, 1976
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- One-Particle Properties of an Inhomogeneous Interacting Electron GasPhysical Review B, 1966
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964