Diffraction studies of the high pressure phases of GaAs and GaP
- 1 September 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (9) , 6179-6185
- https://doi.org/10.1063/1.331530
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Density-functional calculation of static and dynamic properties of GaAsPhysical Review B, 1981
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- High pressure phase transitions in tetrahedrally coordinated semiconducting compoundsSolid State Communications, 1978
- Ultrahigh pressure apparatus using cemented tungsten carbide pistons with sintered diamond tipsReview of Scientific Instruments, 1975
- GaP semiconducting-to-metal transition near 220 kbar and 298°KSolid State Communications, 1975
- Raman scattering and phonon dispersion in Si and GaP at very high pressurePhysical Review B, 1975
- Semiconductor-to-metal transition in GaP under high pressureSolid State Communications, 1974
- Hydrostatic limits in liquids and solids to 100 kbarJournal of Applied Physics, 1973
- Crystal Structures at High Pressures of Metallic Modifications of Silicon and GermaniumScience, 1963
- Pressure induced phase transitions in silicon, germanium and some III–V compoundsJournal of Physics and Chemistry of Solids, 1962