High power InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers grown by three step MOVPE
- 4 February 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (3) , 253-255
- https://doi.org/10.1049/el:19930174
Abstract
The first demonstration of distributed feedback InGa-AsGaAs buried heterostructure strained quantum well lasers with In0.49Ga0.51P cladding layers entirely grown by a three step MOVPE process is reported. Uncoated distributed feedback buried heterostructure lasers with a pn InGaP current blocking junction on a p+-GaAs substrate show a low laser threshold of 3.2 mA and a high output power of 45 mW both measured CW at RT.Keywords
This publication has 1 reference indexed in Scilit:
- High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990