A Study of Nitrogen Incorporation during the Oxidation of Si(100) in N 2 O at High Temperatures

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Abstract
The oxidation of Si(100) in has been studied at temperatures in the range from 950 to 1200°C using secondary ion mass spectroscopy, Auger electron spectroscopy, and x‐ray photoelectron spectroscopy. During oxidation N became incorporated into the oxide film, the amount increasing with increasing temperature to 1100°C and then falling to a lower value at 1200°C. The N was concentrated as a thin N‐rich layer near the interface inhibiting the influx of oxidant, leading to a reduction in the extent of oxidation compared with that in pure . The oxidant species is believed to be NO, which is stable under the conditions of the experiments. The N‐rich phase was shown to have a composition of surmounted by N‐rich oxynitride.
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