Development of 10 kV 4H-SiC Power DMOSFETs

• 15 June 2004
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 457-460, 1385-1388
• https://doi.org/10.4028/www.scientific.net/msf.457-460.1385

Abstract

Keywords

• HIGH VOLTAGE (HV)
• JUNCTION TERMINATION EXTENSION (JTE)
• MULTIPLE ZONE JTE
• POWER MOSFET