RAM cell recovery mechanisms following high-energy ion strikes

1 January 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (1) , 7-9
https://doi.org/10.1109/edl.1987.26532

Abstract

Recovery times for a RAM cell following a high-energy ion strike are calculated using simulation techniques in which transport and circuit behavior are modeled simultaneously. The recovery time, typically several nanoseconds for a 140-MeV Kr strike, is intermediate to analytical results for funneling and diffusion. For such large strikes, the primary factor determining recovery is modulation of the photocollection by loading at the struck node, not intrinsic funneling characteristics, as is expected for smaller alpha particle strikes. The recovery is fundamentally linked to the cell configuration and cannot be accurately modeled using calculations representative of the individual cell elements.

Keywords

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