Capacitance analysis for AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactor diodes
- 1 February 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (3) , 1457-1462
- https://doi.org/10.1063/1.366850
Abstract
By self-consistently solving Schrödinger and Poissons equations, we have investigated the capacitances of AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors. When compared with semiclassical particle model, quantum mechanics show that the maximal capacitance of the varactor is saturated when the spacer and barrier are thin. When the spacer and barrier are very thick, both the quantum mechanics and semiconductor particle approach result in the same conclusion, namely, the maximal capacitance is inversely proportional to the sum of the spacer and barrier thicknesses. We have also shown that the maximal capacitance increases for high carrier effective mass.This publication has 10 references indexed in Scilit:
- Analysis of symmetric varactor frequency multipliersMicrowave and Optical Technology Letters, 1997
- Planar V-band frequency tripler for indoor communication systemsPublished by SPIE-Intl Soc Optical Eng ,1996
- Heterostructure barrier varactors at submillimetre wavesPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 1996
- Novel concepts for improved nonlinear transmission line performanceIEEE Transactions on Microwave Theory and Techniques, 1995
- Theoretical studies of the optical characteristics of the resonant tunneling light-emitting diodeJournal of Applied Physics, 1994
- High breakdown voltage AlAs/lnGaAs quantum barrier varactor diodesElectronics Letters, 1993
- C-V and I-V characteristics of quantum well varactorsJournal of Applied Physics, 1992
- Frequency multipliers for millimeter and submillimeter wavelengthsProceedings of the IEEE, 1992
- Monolithic high-power millimeter-wave quasi-optical frequency multiplier arrays using quantum barrier devicesIEEE Transactions on Electron Devices, 1992
- Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodesIEEE Electron Device Letters, 1990