Stress model for the wrinkling of ion-implanted layers
- 1 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (7) , 3920-3922
- https://doi.org/10.1103/physrevb.41.3920
Abstract
A model is presented to describe the regular ripple patterns observed in several kinds of high-dose ion-implantation experiments. The model is based on elastic instability of the implanted layer, occurring when a critical value of the lateral stress is reached during ion implantation. The predicted wavelength of wrinkling is related to the width of the implanted-atom distribution, and it is in good agreement with experimental results.Keywords
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