Integrated quantum-well-laser transmitter compatible with ion-implanted GaAs integrated circuits

30 August 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (18) , 733-735
https://doi.org/10.1049/el:19840502

Abstract

The fabrication of an integrated optoelectronic transmitter consisting of an MOCVD-grown quantum-well laser and ion-implanted metal-semiconductor field-effect transistors (MESFETs) is described. The transmitter is characterised by a laser threshold current of 30 mA, differential quantum efficiency of 50%, MESFET transconductance of 60 mS/mm, and operation at frequencies up to 2 GHz.

Keywords

SEMICONDUCTOR LASERS
METALORGANIC CVD
MESFET
EPITAXIAL GROWTH
ION-IMPLANTED GAAS INTEGRATED CIRCUITS
OPTICAL COMMUNICATION EQUIPMENT
MONOLITHIC IC
INTEGRATED OPTICS
2 GHZ
30 MA THRESHOLD CURRENT
III-V SEMICONDUCTORS
VPE
MOCVD-GROWN QUANTUM-WELL LASER
INTEGRATED OPTOELECTRONIC TRANSMITTER
GAAS/ALGAAS

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