Ultra-high frequency photoconductive decay for measuring recombination lifetime in silicon
- 1 January 1996
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 353 (1) , 161-176
- https://doi.org/10.1063/1.49405
Abstract
Here I describe a new and more sensitive version of radio frequency photoconductive decay (RFPCD) operating in the ultra‐high frequency region. I have renamed the technique ultra‐high frequency photoconductive decay (UHFPCD) and will show it to be extremely well‐suited for the characterization of silicon wafers and thin films. The UHF frequency region is an ideal compromise between volume penetration and lifetime resolvability with system response of 10 ns. Consequently, the technique has successfully been applied to measuring very small samples as well as samples with resistivities as low as 0.01 ohm‐cm.Keywords
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