Stress tests on 1.3 μm buried-heterostructure laser diode
- 14 April 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (8) , 282-283
- https://doi.org/10.1049/el:19830197
Abstract
Preliminary results of the accelerated aging test under stresses of temperature and current are presented. The degradation modes are found to be divided into two patterns which can be mapped in co-ordinates of these stresses.Keywords
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