Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions

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Abstract
Liquid phase epitaxy has been employed for the growth of lattice-matched heterojunctions. The epitaxial layers were grown at 650°- 625°on (100), (111)A, and (111)oriented InP substrates from In‐rich liquid solutions. The layers were characterized by x‐ray diffraction, photoluminescence, and electron microprobe measurements for the determination of lattice constant, bandgap energy, and composition. Quaternary layers lattice matched to InP substrates were grown having bandgap energies between 1.12–1.41 eV. Mirror‐smooth layers have been routinely grown over 100% of the substrate with absolutely no solution droplets remaining on the surface following growth. We experimentally determined a number of liquidus isotherms in the In‐rich region of the quaternary system. In the concentration range and temperature investigated the distribution coefficient of G, while that of As varies between 9.7 and 13.4 for of 0.055 and 0, respectively.

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