Thermopower and thermal conductivity of arsenic from 8K down to 0.3K

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Abstract
The thermoelectric power and thermal conductivity of arsenic have been measured along the binary direction in the temperature range 0.3-8K. The thermoelectric voltage was measured with a SQUID detector. Below 2K the thermopower is due to carrier diffusion and can be described by the equation S11=1.22*10-7 T V K-1. A small number of the gamma holes may have a large effect on the diffusion thermopower. At higher temperatures phonon drag is important. The thermal conductivity is dominated by the charge carriers, but a small lattice contribution can be distinguished. This is proportional to T2 up to 5K and then rises faster. The thermal resistance associated with carrier-phonon scattering varies as T2 and at around 7K approaches in magnitude the thermal resistance due to carrier-impurity scattering. The inelastic scattering of charge carriers is reflected in the reduced Lorenz number.

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