Low-Temperature Surface Cleaning of GaAs by Electron Cyclotron Resonance (ECR) Plasma
- 1 January 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (1A) , L7
- https://doi.org/10.1143/jjap.28.l7
Abstract
Low-temperature surface cleaning of GaAs by electron cyclotron resonance (ECR) plasma is carried out. Pure hydrogen is used for the cleaning gas, and ECR plasma is transported to the substrate surface by a divergent magnetic field. In situ reflection high-energy electron diffraction (RHEED) observation reveals that surface cleaning of GaAs can be successfully performed at temperatures as low as 300°C. The interface between the substrate and GaAs grown layer prepared after plasma cleaning is found by SIMS measurement to be cleaner than that prepared by thermal treatment and MBE growth.Keywords
This publication has 3 references indexed in Scilit:
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- Low-energy ion extraction with small dispersion from an electron cyclotron resonance microwave plasma streamApplied Physics Letters, 1987
- Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam IrradiationJapanese Journal of Applied Physics, 1987