Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
- 15 February 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (4) , 1705-1709
- https://doi.org/10.1063/1.358862
Abstract
GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band‐edge photoluminescence near 3.36 eV and 3.15–3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon‐assisted, donor‐acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of PhysicsThis publication has 18 references indexed in Scilit:
- Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface PretreatmentsJapanese Journal of Applied Physics, 1991
- Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam EpitaxyMRS Proceedings, 1989
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- First order Raman scattering in GaNSolid State Communications, 1986
- Band Structure and Reflectivity of GaNPhysica Status Solidi (b), 1974
- Fundamental energy gap of GaN from photoluminescence excitation spectraPhysical Review B, 1974
- Luminescence in epitaxial GaN : CdJournal of Applied Physics, 1974
- Resonant Raman scattering of TO(A1), TO(E1) and E2 optical phonons in GaNSolid State Communications, 1972
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965