PHOTOVOLTAIC EFFECT IN PbxSn1−xTe DIODES

15 October 1966

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 9 (8) , 304-306
https://doi.org/10.1063/1.1754761

Abstract

Photovoltaic response has been observed in p‐n junctions of Pb_xSn_1−xTe at wavelengths up to 9.5 μ at 77°K and up to 12 μ at 12°K. These results together with previous photoluminescence data and the proposed model for the band structure of Pb_xSn_1−xTe (ref. 1) indicate that these alloys have considerable potential for efficient infrared detection throughout the 8 to 14 μ atmospheric window and well beyond.

Keywords

BAND STRUCTURE
INFRARED

This publication has 2 references indexed in Scilit:

Band Structure and Laser Action in ${Pb}_{x} {Sn}_{1 - x} Te$
Physical Review Letters, 1966
PbTe DIODE LASER
Applied Physics Letters, 1964