Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films
- 20 May 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (21) , 2965-2967
- https://doi.org/10.1063/1.116370
Abstract
By using the cold plasma torch we developed, TiO2 films were deposited on substrates exposed to air by feeding Ti(OEt)4 into the plasma. XPS and x‐ray analyses revealed that all films were stoichiometric and amorphous TiO2, but Raman spectra indicated the existence of short‐range crystallinity in films deposited above 350 °C. The short range structure changed from anatase to rutile by admixing of hydrogen to the plasma. The rutile containing TiO2 film had a higher breakdown electric field as well as a higher dielectric constant than the anatase containing film.Keywords
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