Monolithic integration of a thin and short metal-semiconductor-metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi-insulating substrate
- 6 November 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19) , 1966-1968
- https://doi.org/10.1063/1.102134
Abstract
The first fabrication of a thin and short GaAs metal-semiconductor-metal photodetector monolithically integrated with a GaAlAs optical inverted rib waveguide on a semi-insulating GaAs substrate is reported. An only 0.2-μm-thick and 100-μm-long GaAs absorbing layer is needed to detect 90% of the optical signal at 0.85 μm wavelength. Static, dynamic, and noise measurements have been performed and a bandwidth in excess of 15 GHz is obtained.Keywords
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