A new interimpurity recombination in GaP; revised values for acceptor binding energies
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1) , 49-51
- https://doi.org/10.1063/1.89836
Abstract
We have observed the radiative recombination of electrons, attached to nitrogen pairs, with holes on neutral acceptors. The acceptor binding energies are found to be 102.5±1 meV for Cd, 70.1±1 meV for Zn, and 54.7±1 meV for C, 8.3 meV larger than previously accepted values. This result implies corresponding increases in the band gap and exciton binding energy, to 2.350±0.002 eV and 22±2 meV, respectively, at 2 K.Keywords
This publication has 10 references indexed in Scilit:
- Theory of indirect excitons in semiconductorsPhysical Review B, 1977
- Excited states of excitons bound to nitrogen pairs in GaPPhysical Review B, 1977
- A new method in the theory of indirect excitons in semiconductorsSolid State Communications, 1976
- Spectroscopy of Excited Acceptor States in GaPPhysical Review Letters, 1976
- The dielectric constant of GaP from a refined analysis of donor-acceptor pair luminescence, and the deviation of the pair energy from the coulomb lawJournal of Luminescence, 1973
- Spectroscopic Study of Tellurium Donors in GaPPhysical Review B, 1970
- Optical Absorption Due to Excitation of Electrons Bound to Si and S in GaPPhysical Review B, 1969
- New Red Pair Luminescence from GaPPhysical Review B, 1968
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966