Stable tantalum silicide Schottky barrier on n -type gallium arsenide evaluated at elevated temperatures
- 28 April 1983
- journal article
- research article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (9) , 330-332
- https://doi.org/10.1049/el:19830228
Abstract
The high-temperature stability of sputtered tantalum silicide contacts on gallium arsenide has been evaluated. Diodes consisting of Ta silicide on epitaxial n (1.9 × 1017 cm−3; 0.23 μm/n+ GaAs substrate were annealed at temperatures from 375°C to 800°C. Result show that the ideality factor, barrier height and reverse breakdown voltage remain stable at value of 1.1, 0.79 V and 9 V, respectively. MESFETs with Ta silicide gates exhibited similar drain current/voltage characteristics as conventional Cr/Au gate devices.Keywords
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