Strain at SiSiO2 interfaces studied by Micron-Raman spectroscopy
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 116-126
- https://doi.org/10.1016/0169-4332(89)90424-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A lattice theory of morphic effects in crystals of the diamond structurePublished by Elsevier ,2004
- Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on SiApplied Physics Letters, 1987
- Intrinsic SiO2 film stress measurements on thermally oxidized SiJournal of Vacuum Science & Technology B, 1987
- Raman microprobe determination of local crystal orientationJournal of Applied Physics, 1986
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Raman measurements of temperature during cw laser heating of siliconJournal of Applied Physics, 1980
- Effects of interband excitations on Raman phonons in heavily dopedPhysical Review B, 1978
- Interface stress of AlxGa1−xAs–GaAs layer structuresJournal of Applied Physics, 1973
- Characteristics of a Propagating Gaussian BeamApplied Optics, 1970
- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970