Analysis of optical bias effect on transient photoluminescence in a-Si:H
- 31 May 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 58 (7) , 451-454
- https://doi.org/10.1016/0038-1098(86)90029-3
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Pfost, Vardeny, and Tauc RespondPhysical Review Letters, 1985
- Comment on "Optical Bias Control of Dispersive Relaxations in-Si: H"Physical Review Letters, 1985
- Zeldov and Weiser RespondPhysical Review Letters, 1985
- Effect of Bias Illumination on Photoinduced Absorption Decay in-Si: HPhysical Review Letters, 1985
- Photoluminescence in hydrogenated amorphous siliconPhysical Review B, 1984
- Dispersive and Nondispersive Transport in Amorphous Semiconductors in Presence of Bias IlluminationPhysical Review Letters, 1984
- Optical Bias Control of Dispersive Relaxations in-Si: HPhysical Review Letters, 1984
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Optical Studies of Excess Carrier Recombination in-Si: H: Evidence for Dispersive DiffusionPhysical Review Letters, 1980
- Time-Resolved Optical Absorption and Mobility of Localized Charge Carriers in -Physical Review Letters, 1979