NRA and XPS characterizations of layers formed by rapid thermal nitridation of thin SiO2 films
- 1 February 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 64 (1-4) , 744-749
- https://doi.org/10.1016/0168-583x(92)95570-h
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Characterization of very thin Si oxynitride films produced by rapid thermal processingApplied Physics Letters, 1989
- Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processingIEEE Transactions on Electron Devices, 1989
- Influence of process parameters on the composition and the electrical properties of thin-plasma-nitrided oxidesJournal of Vacuum Science & Technology B, 1988
- Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devicesIEEE Transactions on Electron Devices, 1988
- Rapid isothermal processingJournal of Applied Physics, 1988
- The thermal oxidation of silicon the special case of the growth of very thin filmsAdvances in Physics, 1986
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- Thermal nitridation of silicon: An XPS and LEED investigationJournal of Vacuum Science & Technology B, 1984
- (Invited) Thermal Nitridation of Silicon in Advanced LSI ProcessingJapanese Journal of Applied Physics, 1981
- Investigation of reactively sputtered silicon nitride films by complementary use of backscattering and nuclear-reaction microanalysis resultsJournal of Applied Physics, 1976