Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

26 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 193-196
https://doi.org/10.1109/iedm.2002.1175811

Abstract

A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is less than 5 V and pulse width as narrow as 10 ns. The high/low resistance ratio may be larger than 1,000. The results of a test array indicated that RRAM could be programmed by bit or by word.

Keywords

COLOSSAL MAGNETORESISTANCE
TRANSISTORS
NONVOLATILE MEMORY
RANDOM ACCESS MEMORY
CIRCUIT TESTING
THIN FILM CIRCUITS
SPACE VECTOR PULSE WIDTH MODULATION
RESISTORS
READ-WRITE MEMORY
CMOS MEMORY CIRCUITS

This publication has 1 reference indexed in Scilit:

Electric-pulse-induced reversible resistance change effect in magnetoresistive films
Applied Physics Letters, 2000