Accelerated-Deposition Rate and High-Quality Film Copper Chemical Vapor Deposition Using a Water Vapor Addition to a Hydrogen and Cu(HFA)2 Reaction System
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9R)
- https://doi.org/10.1143/jjap.32.3915
Abstract
Accelerated-deposition-rate chemical vapor deposition (CVD) of copper is studied using hydrogen reduction of bis-hexafluoro acetylacetonate copper (Cu(HFA)2). An in-situ hydrated Cu(HFA)2 formation system using gaseous H2O addition to the hydrogen carrier gas increases the deposition rate to 90 nm/min. This is about ten times larger than that of the conventional reaction system. It also improves the surface morphology and the electrical resistivity of the deposited copper film. A high-aspect-ratio via filling by selective CVD and excellent step coverage by blanket CVD are successfully obtained with this technique.Keywords
This publication has 2 references indexed in Scilit:
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- Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applicationsJournal of Electronic Materials, 1990