A compact dynamic mixing system with a bucket type electron cyclotron resonance (ECR) ion source is used for the formation of oxide films. The oxygen ion energy can be varied between 1 and 25 keV with sufficient current density for the oxide film formation. Titanium oxide films were prepared by Ti evaporation and O2+/O+ ion beam bombardment onto Si wafers and quartz plates. X-ray diffraction (XRD) of films prepared at about 3×10−3 Pa presents polycrystal rutile structure of TiO2 alone and the crystallization is influenced by ion energy and its arrival rate. Rutherford backscattering spectroscopy of these films indicates that the film composition has stoichiometry of TiO2 with or without ion bombardment. The composition is greatly affected by the background cold O2 flow onto samples and at about 3×10−4 Pa the film shows the structure of TiO by ion bombardment.