Optical Properties of-Type InP
- 15 September 1958
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (6) , 1518-1521
- https://doi.org/10.1103/physrev.111.1518
Abstract
Measurements of the intrinsic absorption edge of -type InP at 77°K and 300°K are reported. Differences are found in the spectra of samples of differing origin. The effects are believed due to impurities. Reflection and absorption spectra in the vicinity of the reststrahlen peak are shown. The reststrahlen wavelength is 30.5 μ, the static and high-frequency dielectric constants are and . Freecarrier absorption and reflection spectra are shown. A brief discussion of the implications of the various optical and electrical measurements as regards the conduction band structure is given.
Keywords
This publication has 6 references indexed in Scilit:
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Energy Levels of a Disordered AlloyPhysical Review B, 1955
- Notizen: Über die optischen Eigenschaften von Indiumphosphid im InfrarotenZeitschrift für Naturforschung A, 1954
- The theory of electronic conduction in polar semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1953