Application of Interface Demarcation to the Study of Facet Growth and Segregation: Germanium

Abstract
It has been demonstrated that interface demarcation, achieved by transmitting current pulses across the growth interface, combined with spreading resistance measurements, is uniquely suited for the quantitative investigation of facet growth and associated dopant segregation behavior. Interface demarcation lines (intercepts of the periodically delineated interface with a plane parallel to the growth axis) were used (i) as “rate striations” for the determination of microscopic growth rates, (ii) as “locators” for the identification of simultaneously grown areas in the core and off‐core regions, and (iii) as “time reference markers” for the in‐time correlation of growth and segregation behavior. Applying this technique to Czochralski‐type growth of Ga‐doped Ge it was found that facet growth and segregation are more complex phenomena than assumed in the accepted theoretical models.

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