Spatial distribution of hot electrons as a physical limit to MOS transistor performance
- 25 November 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (24) , 1041-1043
- https://doi.org/10.1049/el:19820712
Abstract
The spatial distribution of the free carriers in the channel of a MOS transistor is changed in the hot-electron regime. There the electron distance from the oxide is enlarged, causing a reduction of gate capacitance and transistor current. This is a physical limit to the performance of MOSFETs with short channels and thin gate oxides.Keywords
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