Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1) , 37-45
- https://doi.org/10.1016/0040-6090(90)90395-t
Abstract
No abstract availableKeywords
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