On the deeply depleted MOS capacitor

1 May 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (5) , 842-844
https://doi.org/10.1109/PROC.1970.7779

Abstract

It is shown that the length of that portion of the depleted region of a deeply depleted MOS capacitor which is active in generating carriers can be found by considering the effect of carrier concentrations on generation rate.

Keywords

MOS CAPACITORS
ELECTRONS
VOLTAGE
RADIO ACCESS NETWORKS
NEODYMIUM
TIN
CAPACITANCE
CHARGE CARRIER LIFETIME
CHARGE CARRIERS