High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

• 1 April 2002
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 389-393, 981-984
• https://doi.org/10.4028/www.scientific.net/msf.389-393.981

Abstract

Keywords

• 4H-SIC
• CHANNEL MOBILITY
• HALL-EFFECT
• INTERFACE STATES (OR TRAPS)
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
• MOS