Evaluation of the threshold voltage for short-channel MOSFET’s
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 217-219
- https://doi.org/10.1063/1.89612
Abstract
It has been well known that in a long‐channel MOSFET, the experimental value of the threshold voltage obtained by the square‐root extrapolation method in the saturation region agrees well with the theoretical criterion. In a short‐channel MOSFET, the so‐determined threshold voltage depends on the drain voltage because of the drain current dependence on the drain voltage VDS. In this letter, a new method to determine the threshold voltage for VDS=0 V will be discussed.Keywords
This publication has 3 references indexed in Scilit:
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- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967