Optical Pumping and Transverse Magnetic Field Effect for Excitation above the Band Edge in p‐Type Semiconductors

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Abstract
The polarization of the luminescence light shows the importance of the thermalization time for electrons, excited in the conduction band by circularly polarized light of energy larger than the band gap. The influence of the thermalization time on the oscillations of the light polarization as a function of the excitation energy is discussed and applied to GaSb and GaAs. Besides, the effect of a transverse magnetic field (”︁Hanle effect„) in a three level atomic system is extended to a semiconductor. This allows to explain the Hanle effect that had not yet been interpreted for such an energy of excitation in a semiconductor. A new form of Hanle line is predicted and the experimental conditions to observe it are specified.