Microscopic structure of the radiative centre in As2Se3 crystals
- 30 April 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 66 (4) , 361-365
- https://doi.org/10.1016/0038-1098(88)90857-5
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Thermalization of excited carriers through band states studied by photoluminescence in As2Se3 and Se single crystalsPhilosophical Magazine Part B, 1987
- Anomalous magnetic properties of triplet excited states in crystalline and amorphous arsenic triselenidePhysical Review B, 1987
- Recombination of geminate pairs in As2Se3 single crystalsPhilosophical Magazine Part B, 1986
- Quenching by electric fields of the luminescence of As2Se3 single crystalsSolid State Communications, 1986
- Recombination and excited-state absorption at photoluminescence centres in crystalline and amorphous arsenic triselenidePhilosophical Magazine Part B, 1984
- Excitation-energy dependence of the photoluminescence total-light decay in arsenic chalcogenidesPhilosophical Magazine Part B, 1983
- Luminescence in amorphous semiconductorsAdvances in Physics, 1976
- Crystalline structures of As2Se3 and As4Se4Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1973
- Study of the mechanism of radiative recombination in vitreous and monocrystalline arsenic selenidePhysica Status Solidi (a), 1972
- Electronic Structure of Crystalline and Amorphous andPhysical Review Letters, 1971