Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon
- 14 February 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 855-857
- https://doi.org/10.1063/1.125607
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- B cluster formation and dissolution in Si: A scenario based on atomistic modelingApplied Physics Letters, 1999
- Energetics of Self-Interstitial Clusters in SiPhysical Review Letters, 1999
- Tight-binding studies of the tendency for boron to cluster in c-Si. II. Interaction of dopants and defects in boron-doped SiJournal of Applied Physics, 1998
- The fraction of substitutional boron in silicon during ion implantation and thermal annealingApplied Physics Letters, 1998
- B diffusion and clustering in ion implanted Si: The role of B cluster precursorsApplied Physics Letters, 1997
- Ab initiopseudopotential calculations of B diffusion and pairing in SiPhysical Review B, 1996
- Transient enhanced diffusion without {311} defects in low energy B+-implanted siliconApplied Physics Letters, 1995