A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications

Publisher Website

9 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1991.147085

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Picosecond GaAs-based photoconductive optoelectronic detectors
Applied Physics Letters, 1989
New MBE buffer used to eliminate backgating in GaAs MESFETs
IEEE Electron Device Letters, 1988
GaAs Power MESFET's: Design, Fabrication, and Performance
IEEE Transactions on Microwave Theory and Techniques, 1979