Organometallic Precursors for the Formation of GaN by MOCVD: Structural Characterization of (CH3)3GaNH(CH2CH3)2 by Gas-Phase Electron Diffraction and ab Initio Molecular Orbital Calculations
- 15 August 2002
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry A
- Vol. 106 (37) , 8762-8768
- https://doi.org/10.1021/jp020523o
Abstract
No abstract availableKeywords
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