An experimentally verified IGBT model implemented in the Saber circuit simulator
- 1 September 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 9 (5) , 532-542
- https://doi.org/10.1109/63.321038
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)IEEE Transactions on Power Electronics, 1990
- Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)IEEE Transactions on Industry Applications, 1990
- An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistorSolid-State Electronics, 1988