Unipolar spin diodes and transistors

Preprint

28 December 2000

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0012484

Abstract

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.

Keywords

TRANSISTORS UNIPOLAR
NONVOLATILE MEMORY
UNIPOLAR DEVICES
UNIPOLAR SPIN
FERROMAGNETIC
SPIN DIODES
BIPOLAR

All Related Versions

Version 1, 2000-12-28, ArXiv
Published version: Applied Physics Letters, 78 (9), 1273.

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