Excess gate current in a junction-gate field-effect transistor
- 1 July 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 58 (7) , 1166-1168
- https://doi.org/10.1109/PROC.1970.7884
Abstract
Approximate potential distribution near the drain of the junction-gate field-effect transistor (JFET) is found and is used to deduce the excess reverse gate current, based on the assumption that such current is caused by an avalanche multiplication of carriers in the channel. Theory agrees well with measurement.Keywords
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