Calculated photocurrents and surface barrier heights
- 1 May 1992
- journal article
- research article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 10 (3) , 493-496
- https://doi.org/10.1116/1.578177
Abstract
This article solves the equations that dictate band flattening due to photo-induced electron–hole pair generation in the depletion region of a semiconductor. The calculations show the influence of the barrier height, the optical properties of the substrate, and the minority carrier properties. The calculations are compared to typical temperature-dependent photoemission results obtained after 10 Å of Ge were deposited onto p-GaAs(110). The results show significant band flattening when a lightly doped sample is brightly illuminated, even at room temperature.This publication has 0 references indexed in Scilit: