Comments on 'Early voltage in very-narrow-base bipolar transistors' by D.J. Roulston
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (5) , 236
- https://doi.org/10.1109/55.55261
Abstract
An improved Early voltage V/sub A/ model for an n/sup +//p/n bipolar transistor derived by D.J. Roulston (see ibid., vol.11, no.2, p.88-9, 1990) is shown to be less accurate, and a new voltage model is derived.Keywords
This publication has 1 reference indexed in Scilit:
- Effects of Space-Charge Layer Widening in Junction TransistorsProceedings of the IRE, 1952