The effect of trapped argon on the minimum temperature for impulse stimulated “explosive” crystallization of DC sputter-deposited amorphous germanium films
- 30 June 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 34 (12) , 907-910
- https://doi.org/10.1016/0038-1098(80)91096-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Impulse stimulated “explosive” crystallization of sputter deposited amorphous (In,Ga)Sb filmsSolid State Communications, 1978
- Observations on the “explosive” crystallization of non-crystalline GeSolid State Communications, 1975
- Phenomenology of the “explosive” crystallization of sputtered non-crystalline germanium filmsJournal of Materials Science, 1973
- Velocity of propagation in the shock-crystallization of sputtered amorphous germaniumSolid State Communications, 1973
- New Noncrystalline Germanium which Crystallizes ``Explosively'' at Room TemperatureApplied Physics Letters, 1972
- Determination of the argon content of sputtered SiO2 films by X-ray fluorescenceThin Solid Films, 1969