Effect of Electron-Hole Scattering on Mobility in Indium Antimonide at High Electric Field
- 1 July 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (7) , 1261-1262
- https://doi.org/10.1143/jpsj.19.1261
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Hot Electrons in Indium AntimonidePhysical Review B, 1963
- Collective Behavior in Solid-State PlasmasPhysical Review B, 1961
- A theory of the effects of carrier-carrier scattering on mobility in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- Electrical Properties of N-Type InSb in High Electric Field at 77°K.Journal of the Physics Society Japan, 1959