15 Gbit/s silicon bipolar amplifier ICusing a novel mounting technique
- 2 February 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (3) , 181-183
- https://doi.org/10.1049/el:19950118
Abstract
A DC-coupled silicon bipolar amplifier IC, for operation in future multigigabit optical communication systems, has been fabricated using ≥30 GHz double-polysilicon transistors. Using a novel HF-connection technique for reducing the bondwire inductance, we have succeeded in the fabrication of a 14 dB gain amplifier IC, with a flatness better than ±0.5 dB, combined with a –3 dB bandwidth of 12.8 GHz. This is the highest bandwidth ever reported for a bonded amplifier circuit in any semiconductor technology.Keywords
This publication has 3 references indexed in Scilit:
- 13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receiversIEEE Journal of Solid-State Circuits, 1994
- A new wide-band input compensation for packaged analog and digital multigigabit IC'sIEEE Journal of Solid-State Circuits, 1994
- Characterization of a 90 degrees microstrip bend with arbitrary miter via the time-domain finite difference methodIEEE Transactions on Microwave Theory and Techniques, 1990