On-wafer characterization of In0.52Al0.48As/In0.53Ga0.47As modulation-doped field-effect transistor with 4.2 ps switching time and 3.2 ps delay
- 10 July 1995
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (2) , 262-263
- https://doi.org/10.1063/1.114687
Abstract
We report fabrication and electro‐optic measurement of In0.52Al0.48As/In0.53Ga0.47As modulation‐ doped field‐effect transistors. The devices are monolithically integrated with coplanar stripline fixtures incorporating photoconductive switches. The switching time for a 0.35 μm T‐gate device is 4.2 ps and the delay is 3.2 ps. This is the fastest directly measured switching in a three‐terminal device reported to date.Keywords
This publication has 0 references indexed in Scilit: